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Ga self-diffusion in isotopically enriched GaAs heterostructures doped with Si and Zn

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Chemical Sciences Division, M.S. Norseng, Basic Energy Sciences (BES) (SC-22) USDOE Office of Science (SC)

1999

3 citations

Abstract

This study attempts to advance the modeling of AlGaAs/GaAs/AlAs diffusion by experimental investigation of Ga self-diffusion in undoped, as-grown doped and Zinc diffused structures. We utilize novel, isotopically enriched superlattice and heterostructure samples to provide direct observation and accurate measurement of diffusion with a precision not possible using conventional techniques.

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