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Infrared Stealth Characteristics of WO3-Based Electrochromic Devices Mediated by Zn2+-Al3+ Gel Electrolyte

Wang K, Yang X, Liu T, Zhang W

Materials (Basel, Switzerland), 2026

Abstract

As one of the core technologies in modern national defense and security fields, infrared stealth technology aims to realize the controllable regulation of the radiation characteristics of targets in the infrared band. This paper focuses on a novel electrochromic device with a structure of WO3/nickel mesh/Al3+-Zn2+gel electrolyte/zinc foil. The structural composition and working mechanism are systematically analyzed, and the infrared stealth regulation performance is emphatically studied. The WO3 thin film and device structure were characterized by scanning electron microscopy (SEM). The infrared emissivity modulation and optical response properties of the device were measured using an infrared thermal imager and a UV-Vis-NIR spectrophotometer. The prepared WO3 film exhibits a dense spherical morphology, indicating excellent uniformity and compactness. After 1000 cycles, the areal capacitance of the device remains 83.7% of its initial value, demonstrating good cycling stability. Under the voltage regulation of -0.1 V to 1.1 V, the emissivity ε of the device at the typical mid-wave infrared wavelength of 4.0 μm decreases from 0.89 (-0.1 V) to 0.67 (1.1 V), with an absolute modulation amplitude Δε of 0.22. At the typical long-wave infrared wavelength of 8.7 μm, ε decreases from 0.96 (-0.1 V) to 0.69 (1.1 V), with an absolute modulation amplitude Δε of 0.29. The electrochromic switching times for coloring and bleaching are 10.1 s and 2.44 s, respectively. According to infrared…

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