Growth and Structural Properties of Rare Earth Nitride Thin Films
Abstract
In this thesis aspects of the growth of rare earth nitride thin films and characterisation of the resulting structural, electronic and magnetic properties of the film are investigated. The rare earth nitrides are a class of materials which combine interesting electronic and magnetic properties with potential applications in novel spintronic device structures. We study the formation of a preferential orientation in polycrystalline thin films of GdN deposited by electron-beam physical vapour deposition. X-ray diffraction is used to characterise the crystalline structure of films of varying thickness to identify a preference to grow along the [111] crystal direction, understood in terms of an evolutionary selection process. Variations in the film microstructure as a result of growth parameter variation are also correlated to electronic and magnetic properties. Investigation of the epitaxial growth of SmN on AlN surfaces revealed a novel growth orientation transition, controllable only via the growth temperature. Epitaxial integration of rare earth nitrides with III-nitride surfaces has previously only resulted in (111)-oriented growth on the (0001) surface as is expected from matching of the close-packed planes in the different crystal structures. High growth temperatures (≥800 ℃) induce (001)-oriented growth of SmN on the same (0001) AlN surface. This unexpected cube-on-hexagon geometry is confirmed through ex situ x-ray and in situ electron diffraction, the latter for which a…
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