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Ultranarrow-bandwidth planar hot electron photodetector based on coupled dual Tamm plasmons

Wen-Yue Liang, Zh.H. Xiao, Hai-Tao Xu, Hai-Dong Deng, Hai Li, Wan-Jun Chen, Zhao-Su Liu, Yongbing Long

Optics Express, 2020

16 citations

Abstract

Hot electron photodetectors based on a planar structure of metal-insulator /semiconductor-metal (MIM/MSM) have attracted much attention due to the easy and cheap fabrication process and the possibility of detecting light with energy lower than the semiconductor band gap. For this type of device, however, hot electron photocurrent is restricted by the trade-off between the light absorption and the internal quantum efficiency (IQE) since high absorption usually occurs within thick metals and the IQE in this case is usually low. The trade-off is circumvented in this paper by proposing a new type of hot electron photodetector based on planar MIM structure and coupled dual Tamm plasmons (TPs), which has a structure of one-dimensional photonic crystals (1DPCs)/Au/TiO2/Au/1DPCs. The coupled modes of the dual TPs at the two 1DPCs/Au interfaces can lead to a high absorption of 98% in a 5 nm-thick Au layer. As a result, the responsivity of the conventional device with two Schottky junctions in series configuration reaches a high value of 9.78 mA/W at the wavelength of 800 nm. To further improve the device performance, devices with four Schottky junctions in parallel configuration are proposed to circumvent the hot electrons loss at the interface of the Au layer and the first TiO2 layer of the 1DPCs. Correspondingly, the hot electrons photocurrent doubles and reaches a higher value of 21.87 mA/W. Moreover, the bandwidth of the responsivity is less than 0.4 nm, the narrowest one when…

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