Impact Ionization Induced by Terahertz Radiation in HgTe Quantum Wells of Critical Thickness
Abstract
We report on the observation of terahertz (THz) radiation induced band-to-band impact ionization in HgTe quantum well (QW) structures of critical thickness, which are characterized by a nearly linear energy dispersion. The THz electric field drives the carriers initializing electron-hole pair generation. The carrier multiplication is observed for photon energies less than the energy gap under the condition that the product of the radiation angular frequency ω and momentum relaxation time τl larger than unity. In this case, the charge carriers acquire high energies solely because of collisions in the presence of a high-frequency electric field. The developed microscopic theory shows that the probability of the light-induced impact ionization is proportional to exp(−E02/E2)\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$\exp (-{E_{0}^{2}}/E^{2})$\end{document}, with the radiation electric field amplitude E and the characteristic field parameter E0. As observed in experiment, it exhibits a strong frequency dependence for ωτ ≫ 1 characterized by the characteristic field E0 linearly increasing with the radiation frequency ω.
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