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Clinical implementation of MOSFETs for entrance dose in-vitro dosimetry with high energy photons for external beam radiation therapy

Jason Morton

Adelaide Research & Scholarship (AR&S) (University of Adelaide), 2006

23 participants

Abstract

In external beam radiotherapy quality assurance is carried out on the individual components of the treatment chain. The patient simulating device, planning system and linear accelerators \nare tested regularly according to set protocols developed by national and international \norganizations. Even though these individual systems are tested errors can be made in the \ntransfer between systems. The best quality assurance for the system is at the end of the \ntreatment planning chain. In-vivo dosimetry measures the dose to the target volume through \nindirect measures at the end of the treatment planning chain and is therefore the most likely \nmethod for picking up errors which might occur earlier in the chain. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have been shown to have a similar error in estimating entrance dose for in-vivo dosimetry to diodes, but no studies have been done clinically with entrance dose in-vivo dosimetry with MOSFETs. The time savings for using MOSFETs makes them preferable to TLD's. Due to their small size and versatility in other applications they are useful as more than dedicated in-vivo dosimetry systems using diodes. Clinical implementation of external beam in-vivo dosimetry would add another use to the MOSFETs without purchasing more specialized equipment. \nMy studies have shown that MOSFETs can be used clinically for external beam in-vivo \ndosimetry using entrance dose measurements. After the MOSFET measurement system was…

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