Compact modeling of ballistic monolayer black phosphorus metal-oxide-semiconductor field-effect transistors
Abstract
Compact models are tools used by the semiconductor industry for digital prototyping of integrated circuits. They are analytical parametrizations of the current-voltage characteristics of nanoelectronic devices in terms of hundreds or thousands of empirical parameters. In this thesis, we present accurate compact models of ballistic metal–oxide–semiconductor field-effect transistors using less than ten parameters, all of which have a clear physical interpretation. In addition to having great predictive power, the models that we present are important conceptual guides for device research and development. We focus our attention on transistors composed of monolayer black phosphorus, a two-dimensional semiconductor with unique electronic and mechanical properties which make it a promising candidate for novel digital logic applications.
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