Quantum Drift-Diffusion and Quantum Energy Balance simulation of nanowire junctionless transistors
Abstract
Multiple gate MOSFETs (MuGFET) have gained significant attention as the scaling of the conventional MOSFET comes to an end. Of the possible architectures, the gate-all-around nanowire (NW) transistor offers the best gate control over the channel. In order to model GAA nanowire devices for channel lengths less than 10nm, while preserving a connection to the drift-diffusion framework familiar to device engineers, we have developed a quantum-corrected transport simulator that includes Quantum Drift-Diffusion (QDD) and Quantum Energy Balance (QEB). This formalism is applied to the example of the NW junctionless transistor (JLT), an interesting modification to the NW-MOSFET obtained by replacing the n+-p-n+ structure by a bar of n+ region, that promises smaller variability.
Read the paper
Related studies
- Chaos and quantum thermalization
- The Dalton quantum chemistry program system
- Cord Blood Leptin and Adiponectin as Predictors of Adiposity in Children at 3 Years of Age: A Prospective Cohort Study
- Quantitative metabolomics by H-NMR and LC-MS/MS confirms altered metabolic pathways in diabetes
- Stable adiabatic quantum batteries
- A novel self-lipid antigen targets human T cells against CD1c(+) leukemias
Go deeper in Evidence Hub
Evidence Hub adds a study data sheet (design, sample size, evidence level, key numbers), an AI summary and a chat grounded in the paper's text.