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Numerical methods for a quantum energy transport model arising in scaled MOSFETs

Shohiro Sho, S. Odanaka

International Conference on Simulation of Semiconductor Processes and Devices, 2011

Abstract

This paper describes numerical methods for a four-moments quantum energy transport(QET) model, which is derived by using a diffusion scaling in the quantum hydrodynamic model. Space discretization is performed by a new set of unknown variables. Numerical stability and convergence are obtained by developing an iterative solution method with a relaxation method. Numerical results in a scaled MOSFET are discussed. The QET model allows simulations of quantum confinement transport, and nonlocal and hot-carrier effects in scaled MOSFETs.

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