Analysis of Electrical Characteristics of Advanced MOSFETs by using a Quantum Energy Transport Model
Abstract
Improvement of device simulation is necessary to improve efficiency of development of advanced MOSFETs miniaturized to nanoscale. In particular, improvement of the fluid simulation model with quick calculation make a substantial contribution. The fluid simulation model includes a drift diffusion (DD) model, which is conventionally used, a quantum drift diffusion (QDD) model including quantum effects, and a quantum energy transport (QET) model including quantum effects and non-equilibrium phenomena.
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