Stability of stationary states of a quantum energy transport model for semiconductors
Abstract
Abstract Due to the ongoing miniaturization of devices quantum effects are no longer negligible in semiconductor modeling. Also temperature effects play a role for example when identifying hot spots in devices. QET models, which can be derived via moment method from the Wigner‐BKG model, include both physical features. We analyze the stability of stationary states. Suitable numerical methods and computational results are presented. (© 2011 Wiley‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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