Analysis of nonequilibrium phenomena on electric characteristics of advanced MOSFETs by using a quantum energy transport model
Abstract
Abstract In this paper, we have investigated nonequilibrium effects for advanced MOSFETs by using a device simulator with quantum energy transport (QET) model. The QET model allows to simulate nonequilibrium carrier transport as well as quantum confinement. The QET model includes the mobility model as a function of carrier temperature in order to consider the nonlocal effects. We have simulated advanced MOSFETs down to 20 nm gate length using the QET model. The QET model is compared with the quantum drift diffusion (QDD) model which includes a mobility model with local assumptions. It is found that the nonlocal mobility model is needed to simulate the advanced MOSFETs with less than 40 nm.
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