Analysis of Non-equilibrium Phenomena on Electric Characteristics of Advanced MOSFETs by using a Quantum Energy Transport Model
Abstract
In this paper, we have investigated non-equilibrium effects for advanced MOSFETs by using a device simulator with quantum energy transport (QET) model. The QET model allows to simulate non-equilibrium carrier transport as well as quantum confinement. The QET model includes the mobility model as a function of carrier temperature in order to consider the non-local effects. We have simulated advanced MOSFETs down to 20 nm gate length using the QET model. The QET model is compared with the quantum drift diffusion (QDD) model which includes a mobility model with local assumptions. It is found that the non-local mobility model is needed to simulate the advanced MOSFETs with less than 40 nm.
Read the paper
Related studies
- Chaos and quantum thermalization
- The Dalton quantum chemistry program system
- Cord Blood Leptin and Adiponectin as Predictors of Adiposity in Children at 3 Years of Age: A Prospective Cohort Study
- Quantitative metabolomics by H-NMR and LC-MS/MS confirms altered metabolic pathways in diabetes
- Stable adiabatic quantum batteries
- A novel self-lipid antigen targets human T cells against CD1c(+) leukemias
Go deeper in Evidence Hub
Evidence Hub adds a study data sheet (design, sample size, evidence level, key numbers), an AI summary and a chat grounded in the paper's text.