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Silicon and polyimide filters for radiation with quantum energies 0. 1-1. 5 keV

Yu.S. Bokov, Yu. S. Kas’yanov, В. С. Корсаков, Yu. S. Leonov, V. I. Mishachev

OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information), 1986

Abstract

The authors prepared membranes of Si and polyimide (C/sub 22/O/sub 5/N/sub 2/H/sub 10/)n with thickness less than 1 submicron with areas not less than 3 x 3 mm. Such membranes can be used either directly as filters which are placed in front of the radiation detector or as substrates for the deposition on them of materials with the needed properties. The authors used laser-induced sources to conduct the filter experiments. Silicon has substantial absorption in the energy region 0.1-0.5 keV; therefore, the authors also studied the possibility of forming a patterned window in the membrane in the polymer layer on the substrate after its development. The polyimide filter in this case lies in front of the Si filter. The use of polyimide allows extraction of the needed region of the spectral distribution of the radiation. During preparation of Si membranes as the base and body for the membrane, the authors chose substrates of Si with orientation along the normal to the substrate. The choice of this orientation was due to the subsequent use of etch processes. The Si substrates were doped from both sides with boron to a concentration of 5 x 10/sup 19/cm/sup -3/ by diffusion into the wafer.

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