Discrete Energy Levels and Charge Transport in Quantum-Dot Single-Electron Transistors
Abstract
This paper presents a theoretical model for charge transport in single-electron circuits based on metallic quantum dots with discrete energy levels. The quantum-dot energy spectrum is calculated numerically using a finite spherical potential well formulation, while a size-dependent work-function model is employed to account for nanoscale effects. The calculated levels are incorporated into the analysis of a single-electron transistor (SET) containing a quantum dot, and transport is described using the master-equation formalism in terms of transitions between charge states. The model treats the quantum dot as a discrete-state system and the surrounding electrodes as Fermi seas with continuous spectra. Steady-state current-voltage characteristics are then computed to examine the effect of quantum-dot size on conduction. The results indicate that the combined influence of Coulomb blockade and the discrete energy structure of the dot play a major role in determining the transport threshold and the staircase behavior of the I-V characteristics.
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