Rare-earth defects in GaN: A systematic investigation of the lanthanide series
Abstract
Rare-earth (RE) doped GaN is of interest for optoelectronics and spintronics and potentially for quantum applications. A fundamental understanding of the interaction between RE dopants and the semiconductor host is key to realizing the material’s full potential. This work reports an investigation of lanthanide (Ln) defects in GaN using hybrid density-functional defect calculations. We find that all the Ln dopants incorporated at the Ga lattice site, LnGa (Ln = La–Lu), are stable as trivalent ions, but Eu and Yb can also be stabilized as divalent and Ce, Pr, and Tb as tetravalent. The location of Ln-related defect levels and the Ln 4f states in the energy spectrum of the host material is determined from first principles. We elucidate the interplay between defect formation and electronic structure, including the Ln–N interaction, and the effect of doping on the local lattice environment. Optical properties are investigated by considering possible defect-to-band and band-to-defect transitions involving LnGa defects with in-gap energy levels, including broad “chargetransfer” transitions. These defects can also act as carrier traps and mediate energy transfer from the host into the 4f -electron core of the Ln ion which leads to sharp intra-f luminescence.
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