Photoelectrochemical Etching of GaN Quantum Wires
Abstract
For this Exploratory Express LDRD we investigated the use photoelectrochemical etching to demonstrate GaN quantum wires with a diameter of less than 10 nm.Although GaN nanowires with much larger sizes (200 nm -2 microns) have been demonstrated by a number of techniques, quantum wires are much more difficult to realize due to the very small dimensions (< 10 nm).Previous demonstrations of semiconductor quantum wires have relied on colloidal methods resulting in large size distributions or complicated regrowth on the edge of a cleaved wafer.Here we propose to use photoelectrochemical etching to realize GaN quantum wires.Previously we have been able to show that this technique can be used to make InGaN quantum dots and we propose to use similar methods to realize GaN quantum wires.To our knowledge, GaN quantum wires have never been demonstrated due to growth and fabrication difficulties.Photoelectrochemical etching has also never been used to demonstrate quantum wires in any material system.If our quantum wire fabrication method is successful, it will open up a new research area centered around GaN quantum wires and related applications.Quantum wires can be used as an efficient nanoscale conduit for the transport of charge and energy and will find applications in nanoelectronics, energy harvesting (solar), nanoscale light emitters, and chem/bio sensors.
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