Investigation of quantum dot structures for terahertz emission
Abstract
The terahertz (THz) frequency has many interesting and useful applications and quantum dot (QD) semiconductor devices are good candidates for generation of terahertz emission via difference frequency generation (DFG) or intraband trasitions lasing. Both techniques require that the energy difference ∆E of the energy states be less than 41.3 meV to achieve terahertz emission. This project will be on the study of QD structures, in particular the well-studied InAs QDs, and its optical properties. Characterization techniques are performed and the results obtained will be used for analysis in how QD growth conditions like monolayer coverage (ML) and growth rate (GR) affect the energy states and ∆E of the QDs.
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