Design of InGaAsN/GaAs quantum well photodetector
Abstract
Our human eyes can only see the visible part of the Electromagnetic Spectrum. \nObjects that do not emit and reflect visibly are invisible to human. However, with \nQuantum Well Infrared Photodetectors (QWIPs), objects that emit or reflect infrared \nradiation can be detected. \nQWIPs utilizing intersubband transitions have been widely investigated during the \npast years. In an n-type doped quantum well (QW), intersubband absorption is of \ninterest because of its applications to far-infrared photodetectors. Based on this \ntechnology, NASA successfully fabricated 256X256 8-12 um GaAs/AlGaAs QWIP \nused for night vision camera. \nIn this project, a simple InGaAsN/GaAs QWIP for 8-12 μm in conduction band is \nstudied and designed by varying the composition of Indium (In) and Nitrogen (N), \nand quantum well width (WW). The effective mass program is used to calculate the \nInGaAsN QW conduction subbands and the absorption spectrum for different \nInGaAsN QW structures. With the help of computer simulation programs, the \noptimum design is achieved to meet both energy transition in two energy levels of \n124meV as well as the strongest absorption among all appropriate results.
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