Design and energy analysis of a new fault-tolerant SRAM cell in quantum-dot cellular automata
Abstract
Quantum-dot cellular automata (QCA) is an emerging technology proposed in response to the limitations of CMOS technology. Moreover, static RAM (SRAM) is crucial for memory design, and efficient RAM design can play a significant role. This paper proposes a fault-tolerant QCA SRAM cell based on QCA three- and five-input majority gates. This cell is implemented on a single layer and does not require any rotated cell, which significantly improves the manufacturability and robustness of the design. Furthermore, our design can tolerate a single omission fault. The proposed 3-input majority gate improves complexity, area, and energy dissipation, on average, by 54%, 68%, and 67% in 1 Ek, respectively, as compared to its previous counterparts. The proposed fault-tolerant SRAM cell improves the complexity, area, and total energy dissipation by almost 13%, 25%, and 35% in 1 Ek, respectively, as compared to its state-of-the-art QCA-based single-layer fault-tolerant counterpart.
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