Magnetoresistive Random Access Memory
Abstract
Introduction Magnetoresistive Random Access Memory (MRAM) combines a magnetic device with standard silicon-based microelectronics to obtain the combined attributes of non-volatility, high-speed operation and unlimited read and write endurance not found in any other existing memory technology. In this paper we provide an overview of Freescale's MRAM technology and describe the MR2A16A, a 4 Mbit MRAM device. As shown in Figure 1, the memory is based on a 1-transistor, 1-magnetic tunnel junction (1T1MTJ) memory cell that employs a novel bit structure and approach for operation. The MR2A16A is fabricated with a 0.18µm CMOS process using five levels of metal, including program current lines clad with highly permeable material for magnetic flux concentration. We describe how the cell architecture, bit structure, and the toggle switching mode are combined to provide significantly improved operational performance and manufacturability as compared to MRAM based on conventional switching.
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