Performance Evolution and Research Progress of Silicon Carbide Sensors in Radiation Environments: A Review
Abstract
Silicon carbide (SiC), a third-generation wide-bandgap semiconductor, demonstrates prominent application advantages for extreme-environment sensing scenarios including deep-space exploration, nuclear reactor monitoring, and fusion device diagnosis, which benefit from its excellent radiation resistance, high-temperature stability, and chemical inertness. This review systematically investigates the action mechanisms of different radiation environments on the electrical and mechanical properties of SiC-based sensors, with emphasis on the regulatory effects of radiation-induced defects on key sensing parameters, including piezoresistive properties, charge-collection efficiency, leakage current, and sensitivity. In addition, this paper discusses the response behavior and research progress of SiC sensors applied in mixed radiation fields. Existing research confirms that although high-fluence radiation can induce lattice defects and further result in the degradation of SiC sensor sensing performance, SiC still retains remarkable advantages in intrinsic radiation resistance. The sensing reliability of SiC in extreme environments can be further improved via device-structure optimization and material-modification strategies. This review is expected to provide a theoretical reference for the development and design of SiC sensors applied in advanced nuclear energy, aerospace, and nuclear medicine fields.
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