High-resolution X-ray photoelectron spectroscopy and characteristic electron-energy loss spectroscopy of the electronic structure of phosphorus-implanted silicon and quantum dots of silicon dioxide with silicon impurities
Abstract
The effect of phosphorus impurities on the electronic structure of silicon single crystals and SiO 2 : Si nanocomposites is studied. The SiO 2 : Si structures with phosphorus impurities that are annealed over 2 h at a temperature of 1000°C exhibit an increase in the photoluminescence peak related to Si nanocrystals. The experimentally determined densities of states in the valence and conduction bands of SiO 2 : Si composites are in good agreement with the local electronic structure in the vicinity of silicon impurities that is calculated within the approximation of linear muffin-tin orbitals.
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