The interfacial reaction and analysis of W thin film on 6H-SiC annealed in vacuum, hydrogen and argon
Abstract
Silicon carbide (SiC) is used as the main diffusion barrier to prevent the fission products (FPs) from escaping in high temperature reactors (HTRs). It retains most of the FPs quite effectively with the exception of silver, strontium and europium. There have also been reports on the reactions between some FPs and SiC, raising some concerns on the integrity of SiC as a coating layer and questioning the ability of SiC as the main diffusion barrier. An additional protective layer of tungsten (W) is proposed to cover the SiC and probably reduce the interaction of FPs with SiC. Coating of SiC layer with W will assist in improving the shielding effect, which will allow for high burn up and enrichment without degrading the SiC. W coatings on SiC are also used for device fabrication. (Thus this study will benefit both semiconductor and nuclear application.) \n \nThe study was conducted by sputter depositing W metal thin films on 6H-SiC at room temperature (RT). The effect of thermal annealing in vacuum, hydrogen (H2) and argon (Ar) of the W thin film deposited on 6H-SiC was investigated as a function of annealing temperature. The resulting solid-state reactions, phase composition and surface structural modification were investigated using Rutherford backscattering spectrometry (RBS), grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The thickness of the as-deposited layer obtained from RUMP simulations was about 73.8…
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