In Silico Engineering of Defect Spins in Silicon Carbide for Solid-State Hybrid Quantum Technologies
Abstract
Abstract Spin defects in wide-bandgap semiconductors hold great promise for the implementation of solid-state quantum bits (qubits) within quantum technologies. These defective qubits can be engineered by applying external optical, electrical, or mechanical controls. In this study, we present electrical- and strain-driven approaches for the deliberate design of defect spins in functional silicon carbide that could serve as qubits. By employing advanced ab-initio calculations based on the standard density functional theory, we predict that the divacancy centers in silicon carbide exhibit spin-triplet ground states, and their electronic and spin-related properties can be tuned by applying the electric field and the realistic uniaxial and biaxial strains. These spin defects can be effectively used to realize qubits. The strain-driven strategy demonstrated in this work can be readily extended to a broad range of point defects in other wide-bandgap semiconductors, thus paving the way for manipulating the spin properties of defects in ionic systems, leading to potential advancements in spintronic technologies.
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Evidence Hub reads this as a simulation / modelling, done in computer models (in silico), not in people. Its evidence level is 5 of 5 (Very low · case / narrative / animal / in vitro / in silico). Case reports, narrative reviews, and animal, cell or computer-model studies give the weakest evidence for human health.
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