Quantum transport in InSb quantum well devices: progress and perspective
Abstract
InSb, a narrow-band III–V semiconductor, is known for its small bandgap, small electron effective mass, high electron mobility, large effective g-factor, and strong spin-orbit interactions. These unique properties make InSb interesting for both industrial applications and quantum information processing. In this paper, we provide a review of recent progress in quantum transport research on InSb quantum well devices. With advancements in the growth of high-quality heterostructures and micro/nano fabrication, quantum transport experiments have been conducted on low-dimensional systems based on InSb quantum wells. Furthermore, ambipolar operations have been achieved in undoped InSb quantum wells, allowing for a systematic study of the band structure and quantum properties of p-type narrow-band semiconductors. Additionally, we introduce the latest research on InAsSb quantum wells as a continuation of exploring physics in semiconductors with even narrower bandgaps.
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