Quantum Transport Characteristics and High-Precision Numerical Simulation of Nanoscale FinFETs
Abstract
Abstract As semiconductor devices scale to the 14 nm technology node and beyond, quantum confinement and high-field effects increasingly degrade the accuracy of conventional semiclassical transport models, whereas fully quantum approaches remain computationally expensive for realistic three-dimensional device-scale simulations. This work proposes a quantum-corrected drift--diffusion framework with three key features: (1) a dynamic quantum-correction factor that adapts to the electric-field gradient and carrier density, (2) a physics-inspired hybrid preconditioner that couples Schur-complement treatment near the interface with algebraic multigrid in the bulk, and (3) a weighting-function-based adaptive mesh strategy that preserves resolution in critical regions while reducing the global problem size. For a 14 nm FinFET case, the proposed method improves the prediction of inversion-layer charge redistribution and short-channel behavior and reduces the computation time from 14.5 h to 4.6 h while lowering the memory footprint from 48 GB to 16 GB. These results demonstrate that the proposed framework provides an efficient and practical tool for device simulation and optimization at advanced technology nodes.
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