Journal of Physics D: Applied Physics
Abstract
In this work, strong photoluminescence (PL) from physical vapor deposited GeSn on Ge-buffered Si is harvested by pursuing high deposition temperature. High-quality Ge0.938Sn0.062 film is obtained through sputtering epitaxy at a record high temperature of 405oC. The PL peak intensity of the sputtering-grown GeSn is enhanced by 21 times compared to that of GeSn with similar Sn content grown by molecular beam epitaxy at 150oC. The PL intensity ratio between the sputtering-grown GeSn and Ge virtual substrate (VS) reaches a value of 18. Power-dependent and temperature-dependent PL characterizations demonstrate that band-to-band recombination dominates in the sputtering-grown GeSn film. The results indicate that high-temperature sputtering epitaxy, which has a merit of low cost and high-productivity potential, is promising to prepare high-quality GeSn films for optoelectronic applications.
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